SI4835 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 13A 8SO
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 2.5 W 5.6 W | 65 nC | 30 V | 1960 pF | 8-SOIC | 4.5 V 10 V | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 25 V | 13 A | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 18 mOhm |