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M1F45M12W2-1LA
Discrete Semiconductor Products

M1F45M12W2-1LA

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STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DMT-32 POWER MODULE, FOURPACK TOPOLOGY, 1200 V, 47.5 MOHM TYP. SIC POWER MOSFET WITH NTC

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DocumentsDS13915+1
M1F45M12W2-1LA
Discrete Semiconductor Products

M1F45M12W2-1LA

Active
STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DMT-32 POWER MODULE, FOURPACK TOPOLOGY, 1200 V, 47.5 MOHM TYP. SIC POWER MOSFET WITH NTC

Deep-Dive with AI

DocumentsDS13915+1

Technical Specifications

Parameters and characteristics for this part

SpecificationM1F45M12W2-1LA
Configuration4 N-Channel
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)1.2 kV
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
Input Capacitance (Ciss) (Max) @ Vds2086 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / Case32-PowerDIP Module (1.264", 32.10mm)
Rds On (Max) @ Id, Vgs64 mOhm
Supplier Device PackageACEPACK DMT-32
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 118$ 49.25

Description

General part information

M1F45M12W2-1LA Series

This ACEPACK DMT-32 power module realizes a fourpack topology with integrated NTC, tailored for the DC/DC converter stage of the OBC in hybrid and electric vehicles. The power module features four silicon carbide Power MOSFETs of 2nd generation from STMicroelectronics. Thanks to the well-recognized chip technology, the ACEPACK DMT-32 ensures the best compromise between energy losses and high switching frequency operation mode. This module allows you to create complex topologies with very high power densities as well as high efficiency requirements. The AlN insulated substrate enables optimal thermal performance. Moreover, thanks to the specific design featuring grooves on the molding ensure a high creepage distance.