Discrete Semiconductor Products

PMR280UN,115

Obsolete

MOSFET N-CH 20V 980MA SC75

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 980MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	PMR280UN,115

Current - Continuous Drain (Id) (Tc)	980 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.89 nC
Input Capacitance (Ciss) (Max)	45 pF, 45 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-416, SC-75
Package Name	SC-75
Power Dissipation (Max)	530 mW
Rds On (Max)	340 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Qualification	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package Name	FET Type	Grade	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) (Tc)
NXP USA Inc. PMR290UNE,115	AEC-Q101	950 mV	700 mA	20 V	SC-75	N-Channel	Automotive	380 mOhm	83 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	0.68 nC	8 V	4.5 V	1.8 V	250 mW 770 mW	SC-75 SOT-416	Surface Mount
NXP USA Inc. PMR280UN,115		1 V		20 V	SC-75	N-Channel		340 mOhm	45 pF 45 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	0.89 nC	8 V	4.5 V	1.8 V	530 mW	SC-75 SOT-416	Surface Mount	980 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 980mA (Tc) 530mW (Tc) Surface Mount SC-75

Technical documentation and resources