Discrete Semiconductor Products

TK8A10K3,S5Q

Obsolete

MOSFET N-CH 100V 8A TO220SIS

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 8A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK8A10K3,S5Q

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	18 W
Rds On (Max) @ Id, Vgs [Max]	120 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case
Toshiba Semiconductor and Storage TK8A10K3,S5Q	20 V	10 V	12.9 nC	Through Hole	TO-220SIS	18 W	530 pF	N-Channel	MOSFET (Metal Oxide)	100 V	150 °C	8 A	120 mOhm	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 8A (Ta) 18W (Tc) Through Hole TO-220SIS

Technical documentation and resources