TK8A10 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 100V 8A TO220SIS
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Technology | Drain to Source Voltage (Vdss) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 10 V | 12.9 nC | Through Hole | TO-220SIS | 18 W | 530 pF | N-Channel | MOSFET (Metal Oxide) | 100 V | 150 °C | 8 A | 120 mOhm | TO-220-3 Full Pack |