Discrete Semiconductor Products

SIR871DP-T1-GE3

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MOSFET P-CH 100V 48A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 100V 48A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR871DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3395 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR871DP-T1-GE3	20 V	90 nC	4.5 V 10 V	PowerPAK® SO-8	Surface Mount	100 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	48 A	2.6 V	20 mOhm	3395 pF	PowerPAK® SO-8

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General part information

P-Channel 100 V 48A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources