Discrete Semiconductor Products
STH260N6F6-2
ActiveSTMicroelectronics
N-CHANNEL 60 V, 1.7 MOHM TYP., 180 A STRIPFET F6 POWER MOSFET IN H2PAK-2 PACKAGE
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Discrete Semiconductor Products
STH260N6F6-2
ActiveSTMicroelectronics
N-CHANNEL 60 V, 1.7 MOHM TYP., 180 A STRIPFET F6 POWER MOSFET IN H2PAK-2 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STH260N6F6-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 183 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 11800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH260N6F6-2 Series
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.Low gate chargeVery low on-resistanceHigh avalanche ruggedness
Documents
Technical documentation and resources