Discrete Semiconductor Products

RJP6085DPK-00#T0

Obsolete

INSULATED-GATE BIPOLAR TRANSISTORS (IGBT)

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Discrete Semiconductor Products

Obsolete

INSULATED-GATE BIPOLAR TRANSISTORS (IGBT)

Technical Specifications

Parameters and characteristics for this part

Specification	RJP6085DPK-00#T0

Current - Collector (Ic) (Max) [Max]	40 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	178.5 W
Supplier Device Package	TO-3P
Vce(on) (Max) @ Vge, Ic [Max]	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Insulated-Gate Bipolar Transistors (IGBT)

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Operating Temperature
Renesas Electronics Corporation RJP6085DPK-00#T0	Through Hole	40 A	3.5 V	178.5 W	600 V	TO-3P	SC-65-3 TO-3P-3	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600V 40A TO-3P

Technical documentation and resources