RJP6085DPK Series
Insulated-Gate Bipolar Transistors (IGBT)
Manufacturer: Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT)
Description
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IGBT 600V 40A TO-3P
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Insulated-Gate Bipolar Transistors (IGBT)
Insulated-Gate Bipolar Transistors (IGBT)
Insulated-Gate Bipolar Transistors (IGBT)
| Part | Mounting Type | Current - Collector (Ic) (Max) [Max] | Vce(on) (Max) @ Vge, Ic [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Package / Case | Operating Temperature |
|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | Through Hole | 40 A | 3.5 V | 178.5 W | 600 V | TO-3P | SC-65-3 TO-3P-3 | 150 °C |