Discrete Semiconductor Products
STF6N65K3
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.1 OHM TYP., 5.4 A SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE
Discrete Semiconductor Products
STF6N65K3
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.1 OHM TYP., 5.4 A SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF6N65K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF6N65K3 Series
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources