Discrete Semiconductor Products

SI5857DU-T1-E3

Obsolete

MOSFET P-CH 20V 6A PPAK CHIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6A PPAK CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5857DU-T1-E3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	2.3 W, 10.4 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI5857DU-T1-E3	2.3 W 10.4 W	20 V	Surface Mount	Schottky Diode (Isolated)	6 A	17 nC	1.5 V	480 pF	MOSFET (Metal Oxide)	PowerPAK® ChipFET™ Single	PowerPAK® ChipFET™ Single	58 mOhm	P-Channel	2.5 V 4.5 V	12 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 6A (Tc) 2.3W (Ta), 10.4W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources

No documents available