SI5857 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 6A PPAK CHIPFET
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.3 W 10.4 W | 20 V | Surface Mount | Schottky Diode (Isolated) | 6 A | 17 nC | 1.5 V | 480 pF | MOSFET (Metal Oxide) | PowerPAK® ChipFET™ Single | PowerPAK® ChipFET™ Single | 58 mOhm | P-Channel | 2.5 V 4.5 V | 12 V | -55 °C | 150 °C |