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GE17080CDA3
Discrete Semiconductor Products

GE17080CDA3

Active
GE Aerospace

SIC 2N-CH 1700V 765A MODULE

GE17080CDA3
Discrete Semiconductor Products

GE17080CDA3

Active
GE Aerospace

SIC 2N-CH 1700V 765A MODULE

Technical Specifications

Parameters and characteristics for this part

SpecificationGE17080CDA3
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id)765 A
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Max)2414 nC
Input Capacitance (Ciss) (Max)58000 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C, 150 °C
Operating Temperature (Min)-55 °C, -55 °C
Package / CaseModule
Package NameModule
Power - Max2350 W
QualificationAEC-Q101
Rds On (Max)2.23 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 5390.00<4d

CAD

3D models and CAD resources for this part

Description

General part information

GE17080 Series

Mosfet Array 1700V (1.7kV) 765A 2350W Chassis Mount Module

Documents

Technical documentation and resources