Discrete Semiconductor Products

GE17080CDA3

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SIC 2N-CH 1700V 765A MODULE

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Discrete Semiconductor Products

Active

SIC 2N-CH 1700V 765A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE17080CDA3

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	765 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2414 nC
Input Capacitance (Ciss) (Max) @ Vds	58000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C, 175 °C
Operating Temperature [Min]	-55 °C, -55 °C
Package / Case	Module
Power - Max [Max]	2350 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.23 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Power - Max [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)
GE Aerospace GE17080CDA3	-55 °C -55 °C	150 °C 175 °C	Module	2 N-Channel	AEC-Q101	2414 nC	2.23 mOhm	765 A	58000 pF	Chassis Mount	Module	2350 W	Silicon Carbide (SiC)	4.5 V	1.7 kV	1700 V

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General part information

Mosfet Array 1700V (1.7kV) 765A 2350W Chassis Mount Module

Technical documentation and resources