JANTXV2N3997
UnknownNPN SILICON HIGH-SPEED POWER 80V, 10A
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JANTXV2N3997
UnknownNPN SILICON HIGH-SPEED POWER 80V, 10A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N3997 |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 80 |
| Grade | Military |
| Mounting Type | Stud Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-111-4, Stud |
| Package Name | TO-111 |
| Power - Max | 2 VA |
| Qualification | 374, MIL-PRF-19500 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 149.70 | <1d |
| Microchip Direct | N/A | 1 | $ 161.21 | 30d+ |
| Newark | Each | 100 | $ 149.70 | 30d+ |
| 500 | $ 143.94 | |||
CAD
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Description
General part information
JANTXV2N3997-Transistor Series
This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die.
Documents
Technical documentation and resources