
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP8NM60D |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 250 V | 51.8 nC | 8 A | 10 V | MOSFET (Metal Oxide) | TO-220-3 | 770 pF | Through Hole | 20 V | 4 V | TO-220 | 80 W | 450 mOhm | N-Channel | 150 °C | |||||
STMicroelectronics | 550 V | 13 nC | 8 A | 10 V | MOSFET (Metal Oxide) | TO-220-3 | Through Hole | 30 V | 5 V | TO-220 | 800 mOhm | N-Channel | 150 °C | -65 °C | 100 W | 415 pF | ||||
STMicroelectronics | 850 V | 6.7 A | 10 V | MOSFET (Metal Oxide) | TO-220-3 | Through Hole | 30 V | 4.5 V | TO-220 | 1.4 Ohm | N-Channel | 150 °C | -55 °C | 150 W | 1870 pF | 60 nC | ||||
STMicroelectronics | 550 V | 13 nC | 8 A | 10 V | MOSFET (Metal Oxide) | TO-220-3 Full Pack | Through Hole | 30 V | 5 V | TO-220FP | 800 mOhm | N-Channel | 150 °C | -65 °C | 25 W | 415 pF | ||||
STMicroelectronics | 600 V | 18 nC | 8 A | 10 V | MOSFET (Metal Oxide) | TO-220-3 | 380 pF | Through Hole | 30 V | 5 V | TO-220 | 1 Ohm | N-Channel | 150 °C | -65 °C | 100 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.36 | |
Description
General part information
STP8N Series
N-Channel 600 V 8A (Tc) 100W (Tc) Through Hole TO-220
Documents
Technical documentation and resources