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Technical Specifications
Parameters and characteristics for this part
| Specification | QS8K13TCR |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 390 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 550 mW |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
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Description
General part information
QS8K13 Series
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources