Catalog
30V Nch+Nch Small Signal MOSFET
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Power - Max [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2.5 V | 20 nC | 28 mOhm | 390 pF | 6 A | TSMT8 | 150 °C | Surface Mount | 30 V | MOSFET (Metal Oxide) | 550 mW | 2 N-Channel (Dual) |
Description
AI
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.