
M93S66-WMN6TP
NRND4 KBIT (16-BIT WIDE) MICROWIRE SERIAL ACCESS EEPROM WITH BLOCK PROTECTION
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M93S66-WMN6TP
NRND4 KBIT (16-BIT WIDE) MICROWIRE SERIAL ACCESS EEPROM WITH BLOCK PROTECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | M93S66-WMN6TP |
|---|---|
| Clock Frequency | 2 MHz |
| Memory Format | EEPROM |
| Memory Interface | SPI |
| Memory Organization [custom] | 16 |
| Memory Organization [custom] | 256 |
| Memory Size | 512 B |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | EEPROM |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 2.5 V |
| Write Cycle Time - Word, Page [custom] | 5 ms |
| Write Cycle Time - Word, Page [custom] | 5 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
M93S66-W Series
The M93S46, M93S56, M93S66 devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as 64, 128 or 256 words (one word is 16 bits), accessed through the MICROWIRE bus.The M93S46, M93S56, M93S66 can operate with a supply voltage from 2.5 V to 5.5 V over an ambient temperature range of -40 °C / +85 °C.Compatible with MICROWIRE bus serial interfaceMemory array1 Kbit, 2 Kbit or 4 Kbit of EEPROMOrganized by word (16b)Page = 4 wordsWriteByte write within 5 msPage write within 5 msReady/busy signal during programmingUser defined write protected areaHigh-speed clock: 2 MHzSingle supply voltage:2.5 V to 5.5 VOperating temperature range: -40 °C up to +85 °C.Enhanced ESD protectionMore than 4 million write cyclesMore than 200-year data retentionPackagesPDIP8 ECOPACK® 1TSSOP8 ECOPACK® 2SO8 ECOPACK® 2
Documents
Technical documentation and resources