Discrete Semiconductor Products
STW56N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.049 OHM TYP., 49 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW56N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.049 OHM TYP., 49 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW56N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 49 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3900 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 358 W |
| Rds On (Max) @ Id, Vgs | 62 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 96 | $ 9.67 | |
Description
General part information
STW56N65M2 Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources