Discrete Semiconductor Products

AOV15S60

NRND

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 520MA/12A 4DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 520MA/12A 4DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AOV15S60

Current - Continuous Drain (Id) @ 25°C	520 mA
Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	717 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	8.3 W, 208 W
Rds On (Max) @ Id, Vgs [Max]	360 mOhm
Supplier Device Package	4-DFN (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Package / Case	Supplier Device Package	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOV15S60	4-PowerTSFN	4-DFN (8x8)	Surface Mount	N-Channel	3.8 V	717 pF	520 mA	12 A	10 V	MOSFET (Metal Oxide)	600 V	8.3 W 208 W	-55 °C	150 °C	30 V	360 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 520mA (Ta), 12A (Tc) 8.3W (Ta), 208W (Tc) Surface Mount 4-DFN (8x8)

Technical documentation and resources