Discrete Semiconductor Products

IRLR014

Obsolete

MOSFET N-CH 60V 7.7A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 7.7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR014

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRLR014TRPBF	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	DPAK	2.5 W 25 W	Surface Mount	400 pF	200 mOhm	60 V	4 V 5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 nC	2 V	10 V	7.7 A
Vishay General Semiconductor - Diodes Division IRLR014	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	DPAK	2.5 W 25 W	Surface Mount	400 pF	200 mOhm	60 V	4 V 5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 nC	2 V	10 V	7.7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK

Technical documentation and resources