IRLR014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 7.7A DPAK
| Part | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | DPAK | 2.5 W 25 W | Surface Mount | 400 pF | 200 mOhm | 60 V | 4 V 5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 8.4 nC | 2 V | 10 V | 7.7 A |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | DPAK | 2.5 W 25 W | Surface Mount | 400 pF | 200 mOhm | 60 V | 4 V 5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 8.4 nC | 2 V | 10 V | 7.7 A |