Discrete Semiconductor Products

SI5415AEDU-T1-GE3

Obsolete

MOSFET P-CH 20V 25A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 25A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5415AEDU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	PowerPAK® ChipFet Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI5415EDU-T1-GE3	MOSFET (Metal Oxide)	8 V	PowerPAK® ChipFET™ Single	9.8 mOhm	25 A	3.1 W 31 W	4300 pF	PowerPAK® ChipFet Single	1 V	20 V	150 °C	-50 °C	1.8 V 4.5 V	Surface Mount	P-Channel	120 nC
Vishay General Semiconductor - Diodes Division SI5415AEDU-T1-GE3	MOSFET (Metal Oxide)	8 V	PowerPAK® ChipFET™ Single	9.6 mOhm	25 A	3.1 W 31 W	4300 pF	PowerPAK® ChipFet Single	1 V	20 V	150 °C	-50 °C	1.8 V 4.5 V	Surface Mount	P-Channel	120 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single

Technical documentation and resources