SI5415 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 25A PPAK
| Part | Technology | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 8 V | PowerPAK® ChipFET™ Single | 9.8 mOhm | 25 A | 3.1 W 31 W | 4300 pF | PowerPAK® ChipFet Single | 1 V | 20 V | 150 °C | -50 °C | 1.8 V 4.5 V | Surface Mount | P-Channel | 120 nC |
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 8 V | PowerPAK® ChipFET™ Single | 9.6 mOhm | 25 A | 3.1 W 31 W | 4300 pF | PowerPAK® ChipFet Single | 1 V | 20 V | 150 °C | -50 °C | 1.8 V 4.5 V | Surface Mount | P-Channel | 120 nC |