Specification	PMPB10XNEAX

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	12.5 W, 1.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

PMPB10XNEA Series

20 V, N-channel Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Qualification	FET Type	Vgs (Max)	Package / Case	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Grade	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Nexperia USA Inc. PMPB10XNEAX	9 A	14 mOhm	150 °C	-55 °C	1.7 W 12.5 W	AEC-Q101	N-Channel	12 V	6-UDFN Exposed Pad	MOSFET (Metal Oxide)	Surface Mount	20 V	2175 pF	DFN2020MD-6	1.8 V	4.5 V	Automotive	34 nC	900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.21

Description

General part information

PMPB10XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.