Catalog
20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Qualification | FET Type | Vgs (Max) | Package / Case | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Grade | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 9 A | 14 mOhm | 150 °C | -55 °C | 1.7 W 12.5 W | AEC-Q101 | N-Channel | 12 V | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | Surface Mount | 20 V | 2175 pF | DFN2020MD-6 | 1.8 V | 4.5 V | Automotive | 34 nC | 900 mV |