Discrete Semiconductor Products

SI7946DP-T1-E3

Obsolete

MOSFET 2N-CH 150V 2.1A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 150V 2.1A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7946DP-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	150 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI7946DP-T1-GE3	150 mOhm	2.1 A	20 nC	PowerPAK® SO-8 Dual	150 V	Surface Mount	Logic Level Gate	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	4 V	1.4 W	MOSFET (Metal Oxide)	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI7946DP-T1-E3	150 mOhm	2.1 A	20 nC	PowerPAK® SO-8 Dual	150 V	Surface Mount	Logic Level Gate	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	4 V	1.4 W	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 150V 2.1A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources