SI7946 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 150V 2.1A PPAK SO8
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | FET Feature | Supplier Device Package | Configuration | Vgs(th) (Max) @ Id | Power - Max [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 150 mOhm | 2.1 A | 20 nC | PowerPAK® SO-8 Dual | 150 V | Surface Mount | Logic Level Gate | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | 4 V | 1.4 W | MOSFET (Metal Oxide) | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | 150 mOhm | 2.1 A | 20 nC | PowerPAK® SO-8 Dual | 150 V | Surface Mount | Logic Level Gate | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | 4 V | 1.4 W | MOSFET (Metal Oxide) | -55 °C | 150 °C |