Discrete Semiconductor Products

STD130N6F7

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STMicroelectronics

MOSFETS N-CHANNEL 60 V, 4.2 MOHM TYP 80 A STRIPFET F7 POWER MOSFET IN DPAK PACKAGE

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DocumentsTN1225 AN4789 +13

Discrete Semiconductor Products

STD130N6F7

Active

STMicroelectronics

MOSFETS N-CHANNEL 60 V, 4.2 MOHM TYP 80 A STRIPFET F7 POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsTN1225 AN4789 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD130N6F7

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	134 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STD130N6F7 Series

Part	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type
STMicroelectronics STD130N6F7	20 V	MOSFET (Metal Oxide)	10 V	4 V	60 V	2600 pF	175 °C	-55 °C	42 nC	DPAK	5 mOhm	134 W	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1764	$ 0.81
Mouser	N/A	1	$ 0.69
		10	$ 0.65
		25	$ 0.64
		100	$ 0.62
		500	$ 0.62
		1000	$ 0.59
		2500	$ 0.59
		5000	$ 0.57

Description

General part information

STD130N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.