Discrete Semiconductor Products
STGWA40M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 40 A LOW LOSS
Discrete Semiconductor Products
STGWA40M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 40 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA40M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 125 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 468 W |
| Reverse Recovery Time (trr) | 355 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 1.03 mJ, 480 µJ |
| Td (on/off) @ 25°C | 140 ns, 35 ns |
| Test Condition | 40 A, 600 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 293 | $ 6.26 | |
Description
General part information
STGWA40M120DF3 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.