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STMicroelectronics-L6981NDR DC to DC Converter and Switching Regulator Chip Conv DC-DC 3.5V to 38V Synchronous Step Down Single-Out 0.85V to 38V 1.5A 8-Pin SO N T/R
Integrated Circuits (ICs)

L6387ED013TR

Active
STMicroelectronics

IGBT/MOSFET DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, 650 MA, 17 V, 105 NS, 8 PINS, SOIC

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Search across all available documentation for this part.

DocumentsDS5522+2
STMicroelectronics-L6981NDR DC to DC Converter and Switching Regulator Chip Conv DC-DC 3.5V to 38V Synchronous Step Down Single-Out 0.85V to 38V 1.5A 8-Pin SO N T/R
Integrated Circuits (ICs)

L6387ED013TR

Active
STMicroelectronics

IGBT/MOSFET DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, 650 MA, 17 V, 105 NS, 8 PINS, SOIC

Deep-Dive with AI

DocumentsDS5522+2

Technical Specifications

Parameters and characteristics for this part

SpecificationL6387ED013TR
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]400 mA
Current - Peak Output (Source, Sink) [custom]650 mA
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeInverting
Logic Voltage - VIL, VIH [custom]1.5 V
Logic Voltage - VIL, VIH [custom]3.6 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-45 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ)50 ns, 30 ns
Supplier Device Package8-SOIC
Voltage - Supply17 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2513$ 1.37
MouserN/A 1$ 1.43
10$ 1.05
25$ 0.95
100$ 0.84
250$ 0.79
500$ 0.76
1000$ 0.73
2500$ 0.72
5000$ 0.70
NewarkEach (Supplied on Cut Tape) 1$ 2.13
10$ 2.02
25$ 1.93
50$ 1.84
100$ 1.75
250$ 1.68
500$ 1.62
1000$ 1.57

Description

General part information

L6387E Series

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD "offline" technology, and able to drive a half-bridge of power MOS or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.High voltage rail up to 600 VdV/dt immunity ± 50 V/nsec in full temperature rangeDriver current capability400 mA source650 mA sinkSwitching times 50/30 nsec rise/fall with 1 nF loadCMOS/TTL Schmitt trigger inputs with hysteresis and pull-downInternal bootstrap diodeOutputs in phase with inputsInterlocking function