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STGWA80H65DFBAG
Discrete Semiconductor Products

STGWA80H65DFBAG

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STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 80 A HIGH SPEED HB SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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DocumentsAN5277+10
STGWA80H65DFBAG
Discrete Semiconductor Products

STGWA80H65DFBAG

Active
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 80 A HIGH SPEED HB SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsAN5277+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA80H65DFBAG
Current - Collector (Ic) (Max) [Max]120 A
Current - Collector Pulsed (Icm)240 A
Gate Charge453 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]535 W
QualificationAEC-Q101
Reverse Recovery Time (trr)64 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy3.26 mJ, 2330 µJ
Td (on/off) @ 25°C360 ns
Td (on/off) @ 25°C-
Test Condition400 V, 80 A, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 610$ 6.60

Description

General part information

STGWA80H65DFBAG Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.