Specification	SSM3K62TU,LF

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	177 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM3K62TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.057 Ω@4.5V, SOT-323F(UFM)

Part	Vgs (Max) [Max]	Operating Temperature	Vgs(th) (Max) @ Id	Grade	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Qualification	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3K62TU,LXHF	8 V	150 °C	1 V	Automotive	1.2 V	4.5 V	2 nC	500 mW	N-Channel	MOSFET (Metal Oxide)	UFM	20 V	177 pF	Surface Mount	AEC-Q101	800 mA	57 mOhm
Toshiba Semiconductor and Storage SSM3K62TU,LF	8 V	150 °C	1 V		1.2 V	4.5 V	2 nC	1 W	N-Channel	MOSFET (Metal Oxide)	UFM	20 V	177 pF	Surface Mount		800 mA	57 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.057 Ω@4.5V, SOT-323F(UFM)

Technical documentation and resources