High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.057 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.057 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.057 Ω@4.5V, SOT-323F(UFM)
| Part | Vgs (Max) [Max] | Operating Temperature | Vgs(th) (Max) @ Id | Grade | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | FET Type | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Qualification | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 8 V | 150 °C | 1 V | Automotive | 1.2 V | 4.5 V | 2 nC | 500 mW | N-Channel | MOSFET (Metal Oxide) | UFM | 20 V | 177 pF | Surface Mount | AEC-Q101 | 800 mA | 57 mOhm |
Toshiba Semiconductor and Storage | 8 V | 150 °C | 1 V | 1.2 V | 4.5 V | 2 nC | 1 W | N-Channel | MOSFET (Metal Oxide) | UFM | 20 V | 177 pF | Surface Mount | 800 mA | 57 mOhm |