Discrete Semiconductor Products

SISS94DN-T1-GE3

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MOSFET N-CH 200V 5.4A/19.5A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 200V 5.4A/19.5A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS94DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.4 A, 19.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5.1 W, 65.8 W
Rds On (Max) @ Id, Vgs [Max]	75 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SISS94DN-T1-GE3	5.1 W 65.8 W	Surface Mount	4 V	10 V	7.5 V	75 mOhm	PowerPAK® 1212-8S	20 V	200 V	PowerPAK® 1212-8S	5.4 A 19.5 A	350 pF	21 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel

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General part information

N-Channel 200 V 5.4A (Ta), 19.5A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources