SISS94 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 5.4A/19.5A PPAK
| Part | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5.1 W 65.8 W | Surface Mount | 4 V | 10 V | 7.5 V | 75 mOhm | PowerPAK® 1212-8S | 20 V | 200 V | PowerPAK® 1212-8S | 5.4 A 19.5 A | 350 pF | 21 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel |