Discrete Semiconductor Products

STD3NK80Z-1

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STMicroelectronics

N-CHANNEL 800 V, 3.8 OHM TYP., 2.5 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

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DocumentsTN1225 AN4337 +13

Discrete Semiconductor Products

STD3NK80Z-1

Active

STMicroelectronics

N-CHANNEL 800 V, 3.8 OHM TYP., 2.5 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsTN1225 AN4337 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD3NK80Z-1

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	485 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STD3NK80Z-1 Series

N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in IPAK package

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
STMicroelectronics STD3NK80Z-1	4.5 V	19 nC	485 pF	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	4.5 Ohm	150 °C	-55 °C	2.5 A	30 V	70 W	IPAK	TO-251	MOSFET (Metal Oxide)	800 V	10 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2341	$ 1.85

Description

General part information

STD3NK80Z-1 Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.