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8 SOIC
Discrete Semiconductor Products

NVMD6P02R2G

Obsolete
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

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8 SOIC
Discrete Semiconductor Products

NVMD6P02R2G

Obsolete
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMD6P02R2G
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C4.8 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeSurface Mount
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]750 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs33 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NVMD6N04 Series

Automotive Power MOSFET. NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources

No documents available