NVMD6N04 Series

Dual N-Channel Power MOSFET 40V, 5.8A, 34mΩ

Catalog

Dual N-Channel Power MOSFET 40V, 5.8A, 34mΩ

Part	Qualification	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Grade	Power - Max [Max]	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor NVMD6P02R2G	AEC-Q101	Logic Level Gate	20 V	35 nC	8-SOIC	MOSFET (Metal Oxide)	1700 pF	4.8 A	2 P-Channel	33 mOhm	8-SOIC	3.9 mm	0.154 in	Automotive	750 mW	1.2 V	Surface Mount
ON Semiconductor NVMD6N04R2G	AEC-Q101		40 V	30 nC	8-SOIC	MOSFET (Metal Oxide)	900 pF	4.6 A	2 N-Channel (Dual)	34 mOhm	8-SOIC	3.9 mm	0.154 in	Automotive	1.29 W	3 V	Surface Mount

Catalog

Dual N-Channel Power MOSFET 40V, 5.8A, 34mΩ

Key Features

• Designed for use in Low Voltage High Speed switching applications.

• Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life

• Miniature SOIC−8 Surface Mount Package Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET. NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.