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BUL742C
Discrete Semiconductor Products

BUL742C

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STMicroelectronics

TRANS GP BJT NPN 400V 4A 3-PIN(3+TAB) TO-220 TUBE

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BUL742C
Discrete Semiconductor Products

BUL742C

Active
STMicroelectronics

TRANS GP BJT NPN 400V 4A 3-PIN(3+TAB) TO-220 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBUL742C
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]25
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]70 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 584$ 1.84

Description

General part information

BUL742C Series

The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.