Discrete Semiconductor Products

SI2303BDS-T1-E3

Obsolete

MOSFET P-CH 30V 1.49A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 1.49A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2303BDS-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.49 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Power Dissipation (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI2303BDS-T1	-55 °C	150 °C	10 nC	3 V	SOT-23-3 (TO-236)	30 V	200 mOhm	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	700 mW	Surface Mount	P-Channel	4.5 V 10 V	20 V	1.49 A
Vishay General Semiconductor - Diodes Division SI2303BDS-T1-E3	-55 °C	150 °C	10 nC	3 V	SOT-23-3 (TO-236)	30 V	200 mOhm	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	700 mW	Surface Mount	P-Channel	4.5 V 10 V	20 V	1.49 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 1.49A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available