SI2303 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 1.49A SOT23-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Power Dissipation (Max) | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 10 nC | 3 V | SOT-23-3 (TO-236) | 30 V | 200 mOhm | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 700 mW | Surface Mount | P-Channel | 4.5 V 10 V | 20 V | 1.49 A |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 10 nC | 3 V | SOT-23-3 (TO-236) | 30 V | 200 mOhm | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 700 mW | Surface Mount | P-Channel | 4.5 V 10 V | 20 V | 1.49 A |