Discrete Semiconductor Products

STD2NK90Z-1

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STMicroelectronics

N-CHANNEL 900 V, 4.7 OHM TYP., 2.1 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE

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DocumentsSTD2NK90Z-1 | Datasheet TN1156 +15

Discrete Semiconductor Products

STD2NK90Z-1

Active

STMicroelectronics

N-CHANNEL 900 V, 4.7 OHM TYP., 2.1 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE

Deep-Dive with AI

DocumentsSTD2NK90Z-1 | Datasheet TN1156 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD2NK90Z-1

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	485 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	6.5 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STD2NK90Z-1 Series

N-channel 900 V, 4.7 Ohm typ., 2.1 A SuperMESH Power MOSFET in an IPAK package

Part	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STD2NK90Z-1	IPAK TO-251-3 Short Leads TO-251AA	4.5 V	150 °C	-55 °C	10 V	70 W	27 nC	MOSFET (Metal Oxide)	6.5 Ohm	900 V	30 V	Through Hole	N-Channel	2.1 A	IPAK	485 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	855	$ 2.10
Newark	Each	1	$ 1.92
		10	$ 1.75
		150	$ 1.45
		525	$ 1.23
		1050	$ 1.14

Description

General part information

STD2NK90Z-1 Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.