Discrete Semiconductor Products

SI4833BDY-T1-GE3

Obsolete

MOSFET P-CHANNEL 30V 4.6A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET P-CHANNEL 30V 4.6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4833BDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.75 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Technology	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI4833BDY-T1-GE3	350 pF	-55 °C	150 °C	Surface Mount	4.6 A	14 nC	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	P-Channel	8-SOIC	3.9 mm	0.154 in	68 mOhm	2.75 W	2.5 V	20 V	30 V	4.5 V 10 V	8-SOIC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 4.6A (Tc) 2.75W (Tc) Surface Mount 8-SOIC

Technical documentation and resources