SI4833 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CHANNEL 30V 4.6A 8SOIC
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Technology | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 350 pF | -55 °C | 150 °C | Surface Mount | 4.6 A | 14 nC | Schottky Diode (Isolated) | MOSFET (Metal Oxide) | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | 68 mOhm | 2.75 W | 2.5 V | 20 V | 30 V | 4.5 V 10 V | 8-SOIC |