Discrete Semiconductor Products
UT6ME5TCR
ActiveRohm Semiconductor
100V 2.0A/1.0A, DUAL NCH+PCH, DFN2020-8D, POWER MOSFET
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Search across all available documentation for this part.
Discrete Semiconductor Products
UT6ME5TCR
ActiveRohm Semiconductor
100V 2.0A/1.0A, DUAL NCH+PCH, DFN2020-8D, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UT6ME5TCR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1 A, 2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC, 6.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-PowerUDFN |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 840 mOhm, 207 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 14554 | $ 0.47 | |
Description
General part information
UT6ME5 Series
UT6ME5 is a low on-resistance MOSFET ideal for switching applications. This product includes two 100V MOSFETs in a small surface mount package (DFN2020-8D).
Documents
Technical documentation and resources