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100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
Description
AI
UT6ME5 is a low on-resistance MOSFET ideal for switching applications. This product includes two 100V MOSFETs in a small surface mount package (DFN2020-8D).
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100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
| Part | Supplier Device Package | Technology | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | HUML2020L8 | MOSFET (Metal Oxide) | 6-PowerUDFN | 2.5 V | 100 V | 150 °C | Surface Mount | 207 mOhm 840 mOhm | 90 pF | 2.8 nC 6.7 nC | 2 W | N and P-Channel | 1 A 2 A |