Discrete Semiconductor Products

SI4186DY-T1-GE3

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MOSFET N-CH 20V 35.8A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 20V 35.8A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4186DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3630 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	6 W, 3 W
Rds On (Max) @ Id, Vgs [Max]	2.6 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SI4186DY-T1-GE3	3630 pF	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	2.6 mOhm	8-SOIC	2.4 V	90 nC	3 W 6 W	N-Channel	20 V	-55 °C	150 °C	35.8 A	4.5 V 10 V	20 V	Surface Mount

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General part information

N-Channel 20 V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC

Technical documentation and resources