SI4186 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 35.8A 8SO
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3630 pF | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 2.6 mOhm | 8-SOIC | 2.4 V | 90 nC | 3 W 6 W | N-Channel | 20 V | -55 °C | 150 °C | 35.8 A | 4.5 V 10 V | 20 V | Surface Mount |