
BDW94C
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 100 V, 80 W, 12 A, 20000 ROHS COMPLIANT: YES
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BDW94C
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 100 V, 80 W, 12 A, 20000 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | BDW94C |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 750 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 80 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BDW94C Series
The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
Documents
Technical documentation and resources